| PART |
Description |
Maker |
| S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| HUF75332S3S HUF75332G3 HUF75332P3 |
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N沟道,UltraFET功率MOS场效应管)
|
Intersil Corporation
|
| HUF76432P3 HUF76432S3S |
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
| R9110 |
MOSFET, Switching; VDSS (V): 150; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.097; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| STD40NF02L STD40NF02LT4 |
20 A, 20 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-CHANNEL 20V - 0.0095 OHM - 40A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET
|
STMICROELECTRONICS
ST Microelectronics
|
| STD50N03L-1 |
40 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AB
|
STMICROELECTRONICS
|
| HUF75332S3S HUF75332P3 HUF75332G3 |
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| STD25NE03L 6462 |
N - CHANNEL 30V - 0.019 Ohms - 25A - TO-251/TO-252 STripFET POWER MOSFET
N - CHANNEL 30V - 0.019 ohm - 25A - TO-251/TO-252 STripFET POWER MOSFET
N - CHANNEL 30V - 0.019 - 25A - TO-251/TO-252 STripFET TM POWER MOSFET
From old datasheet system
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| SML10B75XX |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 75 A, 100 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| STD11N65M2 STP11N65M2 STU11N65M2 |
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
|
ST Microelectronics
|
| STW88N65M5 STWA88N65M5 |
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 long leads package
|
ST Microelectronics
|
|
